UJ4C075018K3S 750V-18mΩ SiC FET DATA SHEET

PublishTime：2020-12-24

The UJ4C075018K3S is a 750V, 18mΩ G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the TO-247-3L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.
Features：
●On-resistance R-DS(on): 18mΩ (typ)
●Operating temperature: 175°C (max)
●Excellent reverse recovery: Q-rr = 102nC
●Low body diode V-FSD: 1.14V
●Low gate charge: Q-G = 37.8nC
●Threshold voltage V-G(th): 4.8V (typ) allowing 0 to 15V drive
●Low intrinsic capacitance
●ESD protected, HBM class 2

Brand of Product：	UnitedSiC
Part#：	UJ4C075018K3S More Part#
Product Category：	SiC FET More
Application：	[ EV charging ][ PV inverters ][ Switch mode power supplies ][ Power factor correction modules ][ Motor drives ][ Induction heating ] More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：	TO-247-3L
Language：	English Chinese Chinese and English Japanese
Date of Creation：	October 2020
Version Number：	Rev. A
Data Encoding：
Data Size：	1.2 MB

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