GN10N60F A9 Silicon N-Channel Power MOSFET
●General Description
■GN10N60F A9, the silicon N-channel Enhanced VDMOSFETs, is obtained by the double-shield Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard.
●FEATURES:
■Superior switching performance
■Low on resistance(Rdson≤0.8Ω)
■Low gate charge(Typical Data:21.3nC)
■Low reverse transfer capacitances(Typical:23.1pF)
■100% Single pulse avalanche energy test
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Silicon N-Channel Power MOSFET 、 silicon N-channel Enhanced VDMOSFETs |
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Datasheet |
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Please see the document for details |
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TO-220F |
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English Chinese Chinese and English Japanese |
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2017 |
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V01 |
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550 KB |
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