Renesas offers the next generation MRAM by utilizing a new proprietary technology called perpendicular Magnetic-Tunnel-Junction STT

PublishTime： 2020-06-08 Article Source：Renesas

Renesas offers the next generation magnetoresisitve random-access memory (MRAM) by utilizing a new proprietary technology called perpendicular Magnetic-Tunnel-Junction STT (Spin-transfer Torque) to achieve best-in-class non-volatile memory with long data retention and a fast serial interface. With a wide range of memory densities and high operating temperatures, Renesas’ MRAM is suited for applications ranging from factory automation equipment requiring fast back-up data retrieval to medical data units with long-term data storage requirements.

Key features
■ High memory density from 4Mb to 16Mb

■ Low active write and read currents

■ Configurable interfaces for SPI, DPI, QPI with SDR and DDR modes, up to 108MHz

■ Low operating power from 1.71V to 3.6V and operating temperature from -40°C to 105°C

Target Applications:
■ Industrial control and monitoring – Storage uses include real-time data storage and fast back-up data retrieval and machine operation program code.

■ Multifunction printers – Control code and user settings storage, usage data logs for maintenance scheduling, and cache buffer for retrieval of individual transactions.

■ Robotics – Control codes, configuration files, and settings. In general, the larger the non-volatile memory, the greater number of instructions the robot can execute.

■ Data switches and routers – Store system configurations, user settings, and firmware. Security and authentication settings are also stored.

■ Hearing aids – Store different user operating settings in varying activities and acoustic responses preferred by the user. Settings preferred by the user, such as volume level and audio frequencies under different use and ambient conditions, are stored and activated.

■ Data drives – MRAM will soon be widely implemented into solidstate dries (SSDs). It will replace DRAM memory to remove large supercapacitors that make the DRAM non-volatile, and reduce the size of drives.

RENESAS HIGH PERFORMANCE MRAM FAMILY

MRAM has the advantage over non-volatile memory in read and write speeds, memory density, long endurance, and low voltage. A few cost considerations when comparing to the battery-backup SRAM is not only in the battery itself, but the pain of replacement, power management firmware, and space. FRAM is similar in performance to MRAM, however Renesas' MRAM devices offer higher density and higher level of endurance.

High Performance MRAM Family

Evaluation kit
■ Evaluation board with 16Mbit MRAM (M3016) in a SOIC package

■ Part name: M3016-EVK

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