RENESAS HIGH PERFORMANCE MRAM FAMILY

PublishTime：2021-11-09

Renesas offers the next generation magnetoresisitve random-access memory (MRAM) by utilizing a new proprietary technology called perpendicular Magnetic-Tunnel-Junction STT (Spin-transfer Torque) to achieve best-in-class non-volatile memory with long data retention and a fast serial interface. With a wide range of memory densities and high operating temperatures, Renesas' MRAM is suited for applications ranging from factory automation equipment requiring fast back-up data retrieval to medical data units with long-term data storage requirements.
●Key features
■High memory density from 4Mb to 16Mb (serial interface) and up to 32Mb (parallel interface)
■Low active write and read currents
■Configurable interfaces for SPI, DPI, QPI with SDR and DDR modes, up to 108MHz
■Parallel interface read and write speeds at 35ns and 45ns
■Low operating power from 1.71V to 3.6V (serial) and operating temperature from -40°C to 105°C

Brand of Product：	Renesas
Part#：	M3016-EVK 、 M1004204 、 M1008204 、 M1016204 、 M3004204 、 M3008204 、 M3016204 、 M3004316 、 M3008316 、 M3016316 、 M3032316 、 M3016 More Part#
Product Category：	HIGH PERFORMANCE MRAM 、 magnetoresisitve random-access memory 、 memory More
Application：	[ factory automation equipment ][ medical data units ][ Industrial control and monitoring ][ Multifunction printers ][ Robotics ][ Data switches ][ routers ][ Hearing aids ][ Data drives ] More
Data Type：	Supplier and Product Introduction More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：	SOIC
Language：	English Chinese Chinese and English Japanese
Date of Creation：	2021
Version Number：
Data Encoding：	R10PF0008EU0001
Data Size：	1.3 MB

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