M1004204/M1008204/M1016204 M3004204/M3008204/M3016204 High Performance Serial MRAM Memory
Mxxxx204 is a magneto-resistive random-access memory (MRAM). It is offered in density ranging from 4Mbit to 16Mbit. MRAM technology is analogous to Flash technology with SRAM compatible read/write timings (Persistent SRAM, P-SRAM). Data is always non-volatile with 1016 write cycles endurance and greater than 20-year retention @85°C.
MRAM is a true random-access memory; allowing both reads and writes to occur randomly in memory. MRAM is ideal for applications that must store and retrieve data without incurring large latency penalties. It offers low latency, low power, infinite endurance and scalable non-volatile memory technology.
Mxxxx204 is available in small footprint 8-pad DFN (WSON) and 8-pin SOIC packages. These packages are compatible with similar low-power volatile and non-volatile products.
Mxxxx204 is offered with industrial (-40°C to 85°C) and industrial plus (-40°C to 105°C) operating temperature ranges.
FEATURES:
● Interface
■ Serial Peripheral Interface QSPI (4-4-4)
■ Single Data Rate Mode: 108MHz
■ Double Data Rate Mode: 54MHz
● Technology
■ 40nm pMTJ STT-MRAM
■ Data Endurance: 10¹⁶ write cycles
■ Data Retention: 20 years @ 85°C
● Density
■ 4Mb, 8Mb, 16Mb
● Operating Voltage Range
■ VCC: 1.71V – 2.00V
■ VCC: 2.70V – 3.60V
● Operating Temperature Range
■ Industrial: -40°C to 85°C
■ Industrial Plus: -40°C to 105°C
● Packages
■ 8-pad DFN (WSON) (5.0mm x 6.0mm)
■ 8-pin SOIC (5.2mm x 5.2mm)
● Data Protection
■ Hardware Based: Write Protect Pin (WP#)
■ Software Based: Address Range Selectable through Configuration bits (Top/Bottom, Block Protect[2:0])
● Identification
■ 64-bit Unique ID
■ 64-bit User Programmable Serial Number
● Augmented Storage Array
■ 256-byte User Programmable with Write Protection
● Supports JEDEC Reset
● RoHS Compliant
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