UMS Launched New Two-stage GaN High Power Amplifer with Overall Power Supply 20V/0.5A
The CHA8352-99F is a two-stage GaN High Power Amplifer in the frequency band 10.7-12.75GHz. This HPA typically provides 20W of output power associated to 45% of Power Added Efficiency. The small signal gain exhibits more than 25dB. The overall power supply is of 20V/0. 5A (quiescent current).
This circuit is a very versatile amplifier for high performance systems.The circuit is dedicated to space applications and well suited for a wide range of microwave applications and systems.
The part is developed on a robust 0. 15μm gate length GaN on SiC HEMT process and is available as a bare die.
Fig.1
Main Features
■10.7-12.75 GHz frequency range
■Linear Gain is 25 dB
■43dBm Pout for +23dBm input power
■Associated PAE is more than 45% for+23dBm input power
■Associated Id is 2.2A for +23dBm input power
■DC bias: Vd=20Volts @ldq=0.5A
■Chip size 5.3x3.5x0.07mm
- 【Datasheet】CHA8352-99F 20W Ku-Band High Power Amplifier: GaN Monolithic Microwave IC
- 【Datasheet】CHA8352-99F 20W Ku-Band High Power Amplifier: GaN Monolithic Microwave IC
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