EPC GaN FETs help Solarnative achieve industry-leading power density for solar microinverters
GaN FETs help Solarnative achieve industry-leading power density for solar microinverters, enabling module frame integration to solve the challenges of solar power installation.
EL SEGUNDO, Calif.— November 2022 Solarnative uses GaN devices in its new microinverter to achieve industry-best power density. The Power Stick is the smallest inverter in the world, with dimensions of 23.9 by 23,2 by 404millimeters. With an AC output power of 350W, the volume of 0.19 liters corresponds to a power density of 1.6kW per liter. By comparison, the IQ 7A microinverter from a market-leading supplier delivers 349watts with a volume of 1.12 liters, corresponding to 0.31kW per liter – not even one-fifth of the Solarnative device. Despite the extreme size reduction, the European efficiencies are quite comparable, at 96.0 percent for the Power Stick and 96.5 percent for the IQ 7A.
This extreme reduction in construction volume was necessary because Solarnative wants to offer its inverter not only as an external device (Power Stick 350-a) but also as a version for module manufacturers (Power Stick 350-i) for integration into the module frame. The Power Stick is recommended for modules between 330 and 440W.
Solarnative achieves high-power density by using power semiconductors based on gallium nitride, which allows a switching frequency of up to two megahertz and thus a simultaneous reduction in inductive components and volume.
“Each microinverter must be installed adjacent to a panel, usually on a roof. This makes them harder to install, remove and replace. Manufacturers can now address these issues using panels with these built-in microinverters,” said Henk Oldenkamp, Solarnative co-founder. “The Power Stick is the market-ready result of years of development. With the EPC devices inside our modules, we can increase power density significantly, up to 5 times the power density of state-of-art microinverters.”
“Solar applications are putting higher demands on power devices for thermal, reliability, and power density, and silicon-based power conversion is not keeping pace,” said Alex Lidow, CEO of EPC. “We are delighted to work with Solarnative to implement GaN as 3rd generation of semiconductors into their microinverters, allowing customers to simplify installation for easier microinverters and green energy adoptions.”
- +1 Like
- Add to Favorites
Recommend
- ROHM Establishes Ultra-High-Speed Control IC Technology that Maximizes the Performance of GaN Devices
- ROHM Developed a New Ultra-High-Speed Gate Driver IC BD2311NVX-LB Maximizing the Performance of GaN Devices
- GaN Devices for Smaller, Lighter, Smoother Motor Drives
- EPC’s CEO Corner – Alex Lidow Dispels the Myth that GaN Devices Cost More than Silicon
- GaN Switching Frequency: Using Gallium Nitride Technology in Next-Generation High-Frequency Circuits
- EPC Releases Phase 14 Report on GaN Reliability and the Use of Physics-Based Models to Project eGaN Device Lifetime
- Gallium Nitride (GaN)‘s Potential in MedTech
- EPC Space Brings GaN to the Edge of the Atmospherem, and Rohm Hones In on GaN Miniaturization
This document is provided by Sekorm Platform for VIP exclusive service. The copyright is owned by Sekorm. Without authorization, any medias, websites or individual are not allowed to reprint. When authorizing the reprint, the link of www.sekorm.com must be indicated.
Integrated Circuits
Discrete Components
Connectors & Structural Components
Assembly UnitModules & Accessories
Power Supplies & Power Modules
Electronic Materials
Instrumentation & Test Kit
Electrical Tools & Materials
Mechatronics
Processing & Customization
