SMC Releases S2M0025120K 1200V SiC MOSFET Optimized for Power Fast Switching Applications
S2M0025120K series is the new generation 1200V voltage platform SiC MOSFETs family released by SMC. The first Rds(on) is 25mΩ, with two different packages TO-247-4 and TO-247-3. This series of SiC MOSFETs adopts unique planar technology and is further optimized for power fast switching applications. This planar technology and negative voltage drive ensure the reliability and stability of operation, which means lower switching loss and lower EMI.
Features:
Positive temperature characteristics, easy to parallel.
Low on-resistance Typ. RDS(on) = 25mΩ.
Fast switching speed and low switching losses.
Very fast and robust intrinsic body diode.
Comply with AECQ-101 standards.
TJ = 175℃
Applications:
EV Fast Charging Modules
EV On Board Chargers
Solar Inverters
Online UPS/Industrial UPS
SMPS (Switch Mode Power Supplies)
DC-DC Converters
ESS (Energy Storage Systems)
Circuit Diagram:
Maximum Ratings (T=25℃ unless otherwise specified)
Electrical Characteristics(T=25℃ unless otherwise specified)
Reverse Diode Characteristics:
Thermal-Mechanical Specifications:
- 【Datasheet】S2M0025120K 1200V SIC POWER MOSFET
- 【Datasheet】S2M0025120K 1200V SIC POWER MOSFET
- 【Datasheet】S2M0025120K 1200V SIC POWER MOSFET
- 【Datasheet】S2M0025120K 1200V SIC POWER MOSFET
- 【Datasheet】S2M0025120K 1200V SIC POWERMOSFET DataSheet
- 【Datasheet】S2M0025120K 1200V SIC POWER MOSFET
- 【Datasheet】S2M0025120K 1200V SIC POWER MOSFET
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