S2M0025120K 1200V SIC POWER MOSFET

2023-12-20
●Description
■S2M0025120K is single SiC Power MOSFET packaged in TO-247-4 case. The device is a high voltage n-channel enhancement mode MOSFET that has very low total conduction losses and very stable switching characteristics over temperature extremes. The S2M0025120K is ideal for energy sensitive, high frequency applications in challenging environments.
●FEATURES:
■Positive temperature characteristics, easy to parallel.
■Low on-resistance Typ. RDS(on) = 25mΩ .
■Fast switching speed and low switching losses.
■Very fast and robust intrinsic body diode.
■Process of non-bright Tin electroplatin

SMC

S2M0025120K

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Part#

single SiC Power MOSFETSIC POWER MOSFEThigh voltage n-channel enhancement mode MOSFET

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EV Fast Charging Modules ]EV On Board Chargers ]Solar Inverters ]Online UPS ]Industrial UPS ]SMPS ]Switch Mode Power Supplies ]DC-DC Converters ]ESS ]Energy Storage Systems ]

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Datasheet

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Please see the document for details

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TO-247-4

English Chinese Chinese and English Japanese

2022/5/24

N2415

4.1 MB

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