S2M0025120K 1200V SIC POWER MOSFET
■S2M0025120K is single SiC Power MOSFET packaged in TO-247-4 case. The device is a high voltage n-channel enhancement mode MOSFET that has very low total conduction losses and very stable switching characteristics over temperature extremes. The S2M0025120K is ideal for energy sensitive, high frequency applications in challenging environments.
●Features
■Positive temperature characteristics, easy to parallel.
■Low on-resistance Typ. RDS(on) = 25mΩ .
■Fast switching speed and low switching losses.
■Very fast and robust intrinsic body diode.
■“-A” is an AEC-Q101 qualified device.
■The finish of terminals is pure matte Sn.
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SIC POWER MOSFET 、 single SiC Power MOSFET 、 high voltage n-channel enhancement mode MOSFET |
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[ EV Fast Charging Modules ][ EV On Board Chargers ][ Solar Inverters ][ Online UPS ][ Industrial UPS ][ SMPS ][ Switch Mode Power Supplies ][ DC-DC Converters ][ ESS ][ Energy Storage Systems ] |
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Datasheet |
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Please see the document for details |
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TO-247-4 |
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English Chinese Chinese and English Japanese |
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2023/9/4 |
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REV.E |
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N2415 |
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4 MB |
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