High-performance SL80N08D Field-effect Transistors under Advanced Trench Technology
In recent years, the development of intelligent driving technology has been progressing rapidly, with its penetration rate continuously remaining high. Starting from the initial reliance on high-precision maps and now moving towards map-free solutions promoted by various automakers, the goal of intelligent driving remains consistent: to enable advanced-level autonomous driving technology in more application scenarios, achieving fully automated driving from point A to point B. Semiconductor components are also essential core components in intelligent vehicles, and the rise of intelligent vehicles will bring prosperity to the semiconductor market. In this competitive environment, SLKOR Micro (www.slkoric.com) stands out with its versatile products, outstanding performance, and wide range of applications.
Fig.1
SLKOR Micro's semiconductor power devices cover a range of products such as high, medium, and low voltage MOSFETs, thyristors, bridge stacks, and more. These products have been widely applied in various fields such as smartphones, laptops, robots, smart homes, the Internet of Things, LED lighting, 3C digital products, smart wearables, and interconnected devices. With its advanced technology and comprehensive product line, SLKOR Micro provides strong support for the market demand for intelligent vehicles.
In recent years, the rapid development of semiconductor technology has provided strong support for performance enhancement and functional innovation in smart vehicles. Among semiconductor products, the SLKOR Micro Semiconductor SL80N08D medium-voltage MOSFET, as an advanced trench technology product, boasts outstanding performance parameters and broad application prospects.
The SL80N08D utilizes advanced trench technology, which not only enhances device performance but also effectively reduces power consumption and improves operational efficiency. One of its key features is the low gate charge and low gate voltage. By reducing the gate charge, the accumulation and dissipation of charges can be minimized, thereby reducing switching losses in the device and enhancing overall efficiency. Simultaneously, the low gate voltage implies a lower demand for control signals during device operation, thus alleviating the burden on external drive circuits.
Fig.2 MOSFET SL80N08D
In the field of electronic devices, power consumption and efficiency have always been the focus of designers' attention. With the continuous enhancement of electronic device functions and the limitation of battery life, how to reduce power consumption and improve efficiency has become an urgent problem that needs to be solved. The SL80N08D, as a MOSFET with low gate charge and low gate voltage, is highly favored due to its excellent performance indicators. In various circuit designs, using the SL80N08D can effectively reduce system power consumption, extend battery life, and improve overall device performance and competitiveness.
In addition, the SL80N08D also features outstanding parameters such as a drain-source voltage (Vdss) of 80V, continuous drain current (Id) of 80A, on-resistance (RDS(on)@Vgs, Id) of 4.8mΩ@10V,20A, threshold voltage (Vgs(th)@Id) of 2.5V@250uA and so on, providing ample technical support for its use in various high-performance circuit designs.
Fig.3
In terms of application, the SL80N08D is suitable for use in battery protection or other switch applications. In terms of battery protection, its high-performance parameters and reliable performance can effectively protect the battery from damage caused by overcharging, over discharging, short circuits, and other abnormal conditions, improving the safety and stability of battery components. Additionally, in the field of load switching and uninterrupted power supply, the SL80N08D can also demonstrate excellent performance, achieving efficient circuit control and energy management.
In conclusion, as an advanced semiconductor product, the SL80N08D plays an important role in electronic device manufacturing and circuit design with its advanced trench technology, excellent performance parameters, and wide range of applications. Furthermore, Sakemi Semiconductor, with its advanced technology and comprehensive product line, provides strong support for the development of intelligent driving technology. In the future, as intelligent driving technology continues to advance and become more widespread, Sakemi Semiconductor will continue to play a significant role, promoting the widespread application of intelligent driving technology in various fields and bringing more convenience and safety to people's travel and daily lives.
Fig.4
- +1 Like
- Add to Favorites
Recommend
- SL80N10 TO-220 Medium-Voltage N-Channel Power MOSFET from Slkor with 175℃ Maximum Junction Temperature
- How is the Delivery Efficiency of SLKOR?
- Slkor Participated in the 8th Qianren Summit of Dajia Yuan
- Has SLKOR Passed ISO14001?
- Song Shiqiang from SLKOR Keynote Speech -How AI Empowers New Quality Productive Forces
- SLKOR‘s Optocoupler 6N136 Provides a High Level of Isolation up to 5000VRMS and Comes in a DIP-8 Package
- Has SLKOR Products Passed California 65 Testing?
- The Development History of SLKOR
This document is provided by Sekorm Platform for VIP exclusive service. The copyright is owned by Sekorm. Without authorization, any medias, websites or individual are not allowed to reprint. When authorizing the reprint, the link of www.sekorm.com must be indicated.
Integrated Circuits
Discrete Components
Connectors & Structural Components
Assembly UnitModules & Accessories
Power Supplies & Power Modules
Electronic Materials
Instrumentation & Test Kit
Electrical Tools & Materials
Mechatronics
Processing & Customization
