SL80N10 N-Channel Power MOSFET
■VDS =100V ID =80A
▲RDS(ON) < 9mΩ @ VGS=10V
■Special process technology for high ESD capability
■High density cell design for ultra low Rdson
■Fully characterized avalanche voltage and current
■Good stability and uniformity with high EAS
■Excellent package for good heat dissipation
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[ Power switching application ][ Hard switched ][ high frequency circuits ][ Uninterruptible power supply ] |
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Datasheet |
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Please see the document for details |
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TO-220-3L |
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English Chinese Chinese and English Japanese |
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2018/12/11 |
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1.5 MB |
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