SL80N03 N-Channel Enhancement Mode Field Effect Transistor
■High density cell design for ultra low Rdson
■Fully characterized avalanche voltage and current
■Good stability and uniformity with high EAS
■Excellent package for good heat dissipation
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Please see the document for details |
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TO-252 |
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English Chinese Chinese and English Japanese |
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2022/1/11 |
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1.3 MB |
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