-65V/-18A P-Channel Enhancement Mode Power MOSFET MSF18P65 is Well-suited for High Current Load Applications
The MSF18P65 P-Channel Enhancement Mode Power MOSFET uses advanced trench technology and design to provide excellent RDS(ON) with a low gate charge. This device is well-suited for high current load applications.
General Features
VDS=-65V, ID =-18A
RDS(ON)<65mΩ @VGS=-10V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Application
High side switch for full bridge converter
DC/DC converter for LCD display
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Thermal Characteristics
Electrical Characteristics (TC=25℃, unless otherwise noted)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2.Surface Mounted on FR4 Board, t≤10 sec.
3.Pulse Test: Pulse Width ≤ 300μs, Duty Cycle≤2%.
4.Guaranteed by design, not subject to production
5.EAS condition: Tj=25℃,VDD=-20V,VG=-10V,L=1mH,Rg=25Ω,IAS=25A
Package Marking and Ordering Information
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