High speed Trench Fieldstop IGBT MSG25T120FL with a Low VCE(sat) and High Switching Performance is Used for Welding
This IGBT MSG25T120FL from MASPOWER is produced using advanced trench fieldstop IGBT technology, which provides low VCE(sat), high switching performance and excellent quality.
Features
High speed switching
Positive temperature coefficient for easy paralleling
High ruggedness&good thermal stability
Including fast free-wheeling diode
Very tight parameter distribution
Applications
Welding
Absolute Maximum Ratings
Thermal Characteristics
Electrical Characteristics (Tj=25℃ unless otherwise specified)
- +1 Like
- Add to Favorites
Recommend
- High Speed Trench Fieldstop IGBT MSG40T120FH/FHW which Provides Low VCE(sat) and High Switching Performance
- Power Components: MOSFET
- High speed Trench Fieldstop IGBT MSG40T120FL, Providing Low VCE(sat), High Switching Performance and Excellent Quality
- Ultra-Fast Soft Recovery Diode Module F45D60U, Featuring Ultrafast Recovery Time, Low Recovery Loss and Soft Reverse Recovery Characteristics
- -65V/-18A P-Channel Enhancement Mode Power MOSFET MSF18P65 is Well-suited for High Current Load Applications
- 65V/18A N-Channel Enhancement Mode Power MOSFET MSF18N65 Provide Excellent RDS(ON) with Low Gate Charge
- Ultra-Fast Soft Recovery Diode Module ESF100SS60S, Optimized to Reduce Losses and EMI/RFI in High Frequency Power Conditioning Electrical Systems
- 650V Field Stop IGBT MSG40T65FL with High Speed Switching & Low Power Loss for PFC, UPS & Inverter Applications
This document is provided by Sekorm Platform for VIP exclusive service. The copyright is owned by Sekorm. Without authorization, any medias, websites or individual are not allowed to reprint. When authorizing the reprint, the link of www.sekorm.com must be indicated.