65V/18A N-Channel Enhancement Mode Power MOSFET MSF18N65 Provide Excellent RDS(ON) with Low Gate Charge
The N-Channel Enhancement Mode Power MOSFET MSF18N65 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
VDS=65V,ID=18A
RDS(ON)<35mΩ@VGS=10V
High-density cell design for ultra-low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
Absolute Maximum Ratings (Tc=25℃, unless otherwise noted)
Thermal Characteristic
Electrical Characteristic (Tc=25℃, unless otherwise noted)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t≤10 sec.
3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%.
4. Guaranteed by design, not subject to production
5.EAS condition:Tj=25℃，VDD=30V，VG=10V，L=0.5mH，Rg=25Ω
Package Marking and Ordering Information
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