MS30N100HGC1/C0
■VDS=1000V, ID=30A RDS(on)<0.38Ω
■avalanche tested and current rated
■Fast intrinsic Rectifier
|
|
|
|
|
|
|
Datasheet |
|
|
|
|
Please see the document for details |
|
|
|
|
|
|
|
|
TO-247plus;TO-247 |
|
|
English Chinese Chinese and English Japanese |
|
|
2022/11/29 |
|
|
|
|
|
|
|
|
2.8 MB |
- +1 Like
- Add to Favorites
Recommend
- High speed Trench Fieldstop IGBT MSG25T120FL with a Low VCE(sat) and High Switching Performance is Used for Welding
- High Speed Trench Fieldstop IGBT MSG40T120FH/FHW which Provides Low VCE(sat) and High Switching Performance
- High speed Trench Fieldstop IGBT MSG40T120FL, Providing Low VCE(sat), High Switching Performance and Excellent Quality
- Ultra-Fast Soft Recovery Diode Module F45D60U, Featuring Ultrafast Recovery Time, Low Recovery Loss and Soft Reverse Recovery Characteristics
- -65V/-18A P-Channel Enhancement Mode Power MOSFET MSF18P65 is Well-suited for High Current Load Applications
- 65V/18A N-Channel Enhancement Mode Power MOSFET MSF18N65 Provide Excellent RDS(ON) with Low Gate Charge
- Ultra-Fast Soft Recovery Diode Module ESF100SS60S, Optimized to Reduce Losses and EMI/RFI in High Frequency Power Conditioning Electrical Systems
- 650V Field Stop IGBT MSG40T65FL with High Speed Switching ＆ Low Power Loss for PFC, UPS ＆ Inverter Applications
All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.
Integrated Circuits
Discrete Components
Connectors & Structural Components
Assembly UnitModules & Accessories
Power Supplies & Power Modules
Electronic Materials
Instrumentation & Test Kit
Electrical Tools & Materials
Mechatronics
Processing & Customization
