Benchmark Power Density of 5130 W/in3 with GaN FETs Powers Artificial Intelligence and Advanced Computing Applications
EL SEGUNDO, Calif.— September 2023 — EPC announces the availability of the EPC9159, a 48 V / 12 V, LLC converter designed for high-density 48 V server power and DC-DC converters. This reference design can deliver 1 kW of power in a tiny 17.5 mm x 22.8 mm footprint for a power density of 5130 W/cm3. This is achieved by employing gallium nitride (GaN) power switches operating at high switching frequencies in both the primary and secondary circuits.
The power supply topology used in the design of the EPC9159 is based on the LLC topology. The implemented LLC consists of a primary side full bridge, a fixed ratio planar transformer, and a center tab synchronous rectifier for the secondary side. The primary full bridge uses four EPC2619, 80 V-rated 3.3 mΩ GaN transistors, and the secondary uses six EPC2067, 40 V-rated 1.3 mΩ GaN transistors.
The EPC9159 achieves a power stage efficiency of 98% at 25 A and a full-load efficiency of 96.2% at 83 A into 12 V. This design is ideal for high-density computing applications such as artificial intelligence and advanced gaming.
“eGaN® FETs and ICs provide the fast switching, small size, and high efficiency needed to provide the highest power density solutions for advanced computing applications,” said Alex Lidow, CEO of EPC. “The EPC9159 is the ideal solution to address the growing power needs of artificial intelligence and to support the transition to 48 V input for the new high density and high efficiency servers required for these advanced computing applications.”
- +1 Like
- Add to Favorites
Recommend
- EPC Introduces EPC9157 48V to 12V Demo Board Featuring EPC eGaN FETs and New Renesas DC-DC Controller
- EPC‘s New EPC9165 Bidirectional Converter that Delivers 2kW with 96.8% Peak Efficiency
- Design High-Performance Class-D Audio Amplifiers with EPC’s New Reference Design EPC9192 and eGaN FETs
- Sharge Selects GaN FETs EPC2218 from EPC for High-power USB PD Charger Retro 67 to Achieve the Most Efficient Power Conversion
- EPC Announces EPC9193 eGaN® FET Based 3-Phase BLDC Motor Drive Inverter for Low-Cost E-Bikes, Drones and Robotics
- EPC Launches a 3-phase BLDC Motor Drive Inverter EPC9173 with Embedded Gate Driver Function and a Floating Power GaN FET with 3.3mΩ RDS(on)
- Sekorm Became an Authorized Distributor of EPC(Efficient Power Conversion), Which Brings GaN FET Products
- EPC GaN FETs Enable 75 - 231Ampere Laser Diode Control in Nanoseconds for Advanced Automotive Autonomy
This document is provided by Sekorm Platform for VIP exclusive service. The copyright is owned by Sekorm. Without authorization, any medias, websites or individual are not allowed to reprint. When authorizing the reprint, the link of www.sekorm.com must be indicated.