CHA8610-99F, a 8.5-11GHz X-band High Power Amplifier Featuring a 15 to 18W Output Power with a High PAE of 40% at Psat
UMS is enlarging its GaN offer with the CHA8610-99F 8.5-11GHz X-band High Power Amplifier, featuring a 15 to 18W output power with a high PAE of 40% at Psat.
The product is supplied as a bare die.
This circuit is designed for a wide range of applications including military and commercial communication systems.
This product is manufactured using a 0.25µm gate length GaN pHEMT process.
Main features:
Frequency range:8.5-11GHz
PAE: 40% @ Psat
Linear gain: 24dB
Psat: 15W
Biasing:30V@0.68A (quiescent)
Chip size: 5.08 x 2.75 x 0.10mm
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