CHA8610-99F 15W X Band High Power Amplifier GaN Monolithic Microwave IC
Power Amplifier operating between 8.5 and
11GHz and providing typically 15W of
saturated output power and 40% of Power
Added Efficiency.
It is designed for a wide range of
applications, from military to commercial
communication systems.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is available in chip form.
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[ a wide range of applications, from military to commercial communication systems. ] |
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Datasheet |
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REACH 、 RoHS |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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23 Oct 18 |
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DSCHA86108296 |
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765 KB |
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