CHA8611-99F GaN based 18W X-band High Power Amplifier Featuring a High PAE of 43% at Psat
The CHA8611-99F is a GaN based 18W X-band High Power Amplifier, featuring a high PAE of 43% at Psat.
This circuit is designed for a wide range of applications including defense and commercial communication systems. This product is supplied as a bare die.
It is manufactured using UMS proprietary 0.25µm gate length GaN pHEMT process.
Main features:
Frequency range: 8.5-11GHz
PAE: 43% @ Psat
Linear gain: 24dB
Psat: 18W
Biasing: 25V@0.8A (quiescent)
Chip size: 4.36×2.57×0.10mm
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