CHA8611-99F 18W X-Band High Power AmplifierGaNMonolithic Microwave IC
Power Amplifier operating between 8.5 and
11GHz and providing typically 18W of
saturated output power and 43% of power
added efficiency.
It is designed for a wide range of
applications, from military to commercial
communication systems.
The circuit is manufactured with a GaN
HEMT process, 0.25µm gate length, via
holes through the substrate, air bridges and
electron beam gate lithography.
It is available in chip form.
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[ a wide range of applications, from military to commercial communication systems ] |
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Datasheet |
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ESD 、 REACh 、 RoHS |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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05 Jul 18 |
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DSCHA86118185 |
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2.4 MB |
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