UMS CHA7250-QAB a New Powerful Highly Efficient Linear GaN HPA Exhibiting 10W (40dBm) and Covering 10 to 12.75GHz
The CHA7250-QAB is a Powerful Highly Efficient Linear GaN HPA exhibiting 10W (40dBm) and covering 10 to 12.75GHz. This circuit features an excellent PAE of 37% at 28dBm Input Power and a good linear gain of 20dB.
Fig.1
This HPA is proposed in a QFN fully molded plastic package of 6x6mm2. It is designed on a UMS proprietary GaN 0.15µm technology.
Dedicated to Telecom markets, UMS must highlight its perfect match with a point to Point applications demanding high linearity and efficiency.
Fig.2
Product features:
●Frequency range: 10-12.75GHz
●PSAT: 10W- 40dBm
●PAE: 37%@28dBm Pin
●Linear Gain: 20dB
●DC Bias: 20V@130mA
●MSL3 QFN 6x6
Fig.3
- 【Datasheet】CHA7250-QAB 10-12.75GHz High Power Amplifier:GaN Monolithic Microwave IC in SMD leadless package
- 【Datasheet】CHA7250-QAB 10-12.75GHz High Power Amplifier
- 【Datasheet】CHA7250-QAB 10-12.75GHz High Power Amplifier: GaN Monolithic Microwave IC in SMD leadless package
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