Alliance Memory Introduced 1Gb High-Speed CMOS DDR SDRAM AS4C128M8D1-6TIN in 128M x 8 Configuration
SAN CARLOS, Calif. — April 26, 2017 — Alliance Memory introduced a 1Gb high-speed CMOS double data rate synchronous DRAM (High-Speed CMOS DDR SDRAM) in the 66-pin TSOP II package. Offered in an industrial temperature range from -40℃ to +85℃, the AS4C128M8D1-6TIN features a hard-to-find internal configuration of four banks of 32M word x 8 bits.
With a clock frequency of up to 166 MHz for fast data transfer rates, the device released today provides a reliable drop-in, pin-to-pin compatible replacement for a number of similar solutions in industrial, medical, communications, and military products requiring high memory bandwidth. The DDR SDRAM operates from a single +2.5V (±0.2V) power supply, features a power-down mode to lower power consumption, and offers a data mask for write control.
The AS4C128M8D1-6TIN supports sequential and interleave burst types with read or write burst lengths of 2, 4, or 8. Operating the device’s four banks in an interleaved fashion allows random access operation to occur at a higher rate than standard DRAMs, while a sequential and gapless data rate is possible depending on burst length, CAS latency, and speed grade. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh.
Alliance Memory offers an extensive lineup of DDR SDRAMs featuring densities of 64Mb, 128Mb, 256Mb, 512Mb, and 1Gb. For the company’s customers, these devices eliminate costly redesigns by providing long-term support for products that have been end-of-lifed (EOLed) by other suppliers.
Samples and production quantities of the AS4C128M8D1-6TIN are available now.
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