Alliance Memory AS4C256M16D4 and AS4C512M8D4 4Gb High-Speed CMOS DDR4 SDRAMs offer Low Power Consumption of +1.2V
The News: Alliance Memory has expanded its product offering with a line of high-speed CMOS DDR4 SDRAMs. For improved performance over previous-generation DDR3 devices, the 4Gb AS4C256M16D4 and AS4C512M8D4 offer lower power consumption and faster data transfer rates in 96-ball and 78-ball FBGA packages respectively.
Part Numbers: AS4C256M16D4-83BCN, AS4C256M16D4-83BCNTR, AS4C256M16D4-83BIN, AS4C256M16D4-83BINTR, AS4C256M16D4-75BCN, AS4C256M16D4-75BCNTR, AS4C256M16D4-75BIN, AS4C256M16D4-75BINTR, AS4C512M8D4-83BCN, AS4C512M8D4-83BCNTR, AS4C512M8D4-83BIN, AS4C512M8D4-83BINTR, AS4C512M8D4-75BCN, AS4C512M8D4-75BCNTR, AS4C512M8D4-75BIN, and AS4C512M8D4-75BINTR
Key Specifications and Benefits:
Low power consumption of +1.2V (±0.06V)
Offered in 96-ball and 78-ball FBGA packages
Internally configured as 8 banks x 256Mb x 16 bit and 16 banks x 512Mb x 8 bit
Fast clock speeds of 1200MHz and 1333MHz
Extremely high transfer rates of 2400Mbps/pin and 2666Mbps/pin
Available in extended commercial (0℃ to +95℃) and industrial (-40℃ to +95℃) temperature ranges
Support sequential and interleave burst types with read or write burst lengths of BL8/BC4/BC4 or 8 on the fly
The auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence
Easy-to-use refresh functions include auto- or self-refresh
JEDEC- and RoHS-compliant
Lead (Pb)- and halogen-free
Target Applications:
Portable electronics, desktop computers, and servers for industrial, medical, IoT, automotive, gaming, and consumer applications
The Context: Compared to DDR3 SDRAMs, Alliance Memory’s 4Gb DDR4 SDRAMs reduce operating voltages from +1.5V to +1.2V (±0.06V) to increase battery life in portable electronics such as notebook computers, smartphones, and tablets. For increased efficiency and performance in desktop computers and servers, the 256Mb x 16-bit AS4C256M16D4 and 512M x 8-bit AS4C512M8D4 offer up to 16 memory banks and deliver faster clock speeds to 1333MHz for extremely high transfer rates of 2400Mbps/pin (1200MHz) and 2666Mbps/pin (1333MHz). With minimal die shrinks, the DDR4 SDRAMs provide reliable drop-in, pin-for-pin-compatible replacements for numerous similar solutions — eliminating the need for costly redesigns and part requalification.
Availability: Samples of the 4Gb DDR4 SDRAMs are available now.
- +1 Like
- Add to Favorites
Recommend
- Alliance Memory Bolsters Product Lineup With 4Gb High-Speed CMOS DDR4 SDRAMs AS4C256M16D4 and AS4C512M8D4
- Alliance Memory Announces ISO 9001:2015 Recertification
- Alliance rounds out DDR4 SDRAM Lineup with six new 4Gb “A” die devices, which offer lower +1.2V operating voltages and higher speeds to 1600MHz in 96 and 78-Ball FBGA packages
- Alliance Memory has expanded its portfolio of Six New 4Gb “A“ Die DDR4 SDRAMs and a 16Gb Option From Micron Technology
- Alliance Memory Expanded Lineup of High-Speed CMOS DDR4 SDRAMs AS4C1G8D4 and AS4C512M16D4 With 8Gb Devices
- Alliance Memory Introduced AEC-Q100-Compliant 2Gb DDR3L SDRAMs AS4C128M16D3LC-12BAN and AS4C128M16D3LC-12BANTR
- Alliance Memory AS4C1G8D4 and AS4C512M16D4: the 8Gb High-Speed CMOS DDR4 SDRAMs with Low Power Consumption of +1.2V
- Alliance Memory Announced Dual-Die 8Gb DDR3L SDRAMs AS4C1G8D3LA and AS4C512M16D3LA in 78-Ball and 96-Ball FBGA Packages
This document is provided by Sekorm Platform for VIP exclusive service. The copyright is owned by Sekorm. Without authorization, any medias, websites or individual are not allowed to reprint. When authorizing the reprint, the link of www.sekorm.com must be indicated.
Integrated Circuits
Discrete Components
Connectors & Structural Components
Assembly UnitModules & Accessories
Power Supplies & Power Modules
Electronic Materials
Instrumentation & Test Kit
Electrical Tools & Materials
Mechatronics
Processing & Customization
