SMD MOSFET 2N7002W
●Features
■RDS(ON), VGS@10V, IDS@500mA=5 Ω
■RDS(ON), VGS@4.5V, IDS@75mA=7.5 Ω
■Advanced trench process technology.
■High density cell design for ultra low on-resistance.
■Specially designed for battery operated system, solid-state relays drivers, relays, displays, lamps,solenoids, memories, etc.
■In compliance with EU RoHS 2002/95/EC directives.
■Suffix "-H" indicates Halogen-free part, ex. 2N7002W-H.
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Datasheet |
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Please see the document for details |
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SOT-323 |
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English Chinese Chinese and English Japanese |
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2010/06/10 |
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Revision C |
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DS-251109 |
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304 KB |
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