N-Channel SMD MOSFET 2N7002W
●Features
■ESD Protected: 1000V
■RDS(on), VGS@10V, IDS@500mA=7.5 Ω
■RDS(on), VGS@5V, IDS@50mA=7.5 Ω
■Advanced trench process technology
■High density cell design for ultra low on-resistance
■Specially designed for battery operated system, solid-state relays drivers, relays, displays, lamps, solenoids, memories, etc
■In compliance with EU RoHS 2011/65/EU directives
■Suffix "-H" indicates Halogen-free part, ex. 2N7002W-H
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Datasheet |
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Please see the document for details |
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SOT-323 |
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English Chinese Chinese and English Japanese |
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2018/07/09 |
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Revision D |
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DS-251109 |
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305 KB |
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