N-Channel SMD MOSFET ESD Protection 2N7002KW
●Features
■RDS(ON) =3.0Ω, VGS=10V, @60V/0.50A
■RDS(ON) =4.0Ω, VGS=4.5V, @60V/0.20A
■ESD production 2kV (Human body mode)
■Advanced trench process technology
■High density cell design for ultra low on-resistance
■Specially designed for battery operated system, solid-state relays drivers, relays, displays, lamps, solenoids, memories, etc
■In compliance with EU RoHS 2011/65/EU directives
■Suffix "-H" indicates Halogen-free part, ex. 2N7002ΚW-H
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Datasheet |
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Please see the document for details |
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SOT-323 |
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English Chinese Chinese and English Japanese |
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2018/07/09 |
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Revision C |
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DS-251127 |
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308 KB |
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