2N7002KW N-Channel SMD MOSFET ESD Protection
■RDS(ON)=3.0Ω VGS=10V, @60V/0.50A
■RDS(ON)=4.0Ω VGS=4.5V, @60V/0.20A
■ESD production 2kV (Human body mode)
■Advanced trench process technology.
■High density cell design for ultra low on-resistance.
■Specially designed for battery operated system, solid-state relays drivers, relays, displays, lamps, solenoids, memories, etc.
■In compliance with EU RoHS 2002/95/EC directives.
■Suffix "-H" indicates Halogen-free part, ex. 2N7002ΚW-H.
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[ battery operated system ][ solid-state relays drivers ][ relays ][ displays ][ lamps ][ solenoids ][ memories ] |
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Datasheet |
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Please see the document for details |
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SOT-323 |
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English Chinese Chinese and English Japanese |
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2020/11/04 |
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Revision D |
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DS-251127 |
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630 KB |
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