curamik® CERAMIC SUBSTRATES Product Information
●curamik® high temperature/high voltage substrates consist of pure copper bonded to a ceramic substrate such as Al₂O₃ (Alumina), AlN (Aluminum Nitride), HPS (ZrO₂ doped) or silicon based Si₃N₄ (Silicon Nitride).
●curamik provides two technologies to attach the substrate with the copper. DBC (direct bond copper) – a high temperature melting and diffusion process where the pure copper is bonded onto the ceramic and AMB (active metal brazing) – a high temperature process where the pure cop-per is brazed onto the ceramic substrate.
●The high heat conductivity of Al₂O₃ (24 W/mK), AlN (170 W/mK) and Si₃N₄ (90 W/mK) as well as the high heat capacity and thermal spreading of the thick copper cladding (127 – 800 μm) makes our substrates indispensable to power electronics. The mechanical stress on silicon chips mounted directly on the substrate (Chip on Board) is very low, since the coefficient of thermal expansion (CTE) of the ceramic substrate is better matched to the CTE of silicon compared to substrates using a metal or a plastic basis. curamik produces high temperature/high voltage substrates in a master card format that measures 5“ x 7“ and 5.5“ x 7.5“. The individual parts can be left in the master card format to support more efficient assembly and mounting of com-ponents before being separated into individual pieces. We also offer single pieces for single piece assembly.
●Advantages:
■Great heat conductivity and temperature resistance for high performance and high temperature applications
■High insulation voltage
■High heat spreading
■Adjusted coefficient of thermal expansion between chip and substrate
■Efficient processing of master cards and single pieces
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CERAMIC SUBSTRATES 、 high temperature/high voltage substrates |
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Supplier and Product Introduction |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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2016/12/01 |
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Version 2.16 en |
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Publication # 135-003 |
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651 KB |
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