curamik® CERAMIC SUBSTRATES Product Information Technical data sheet

2021-06-01
curamik® high temperature/high voltage substrates consist of pure copper bonded to a ceramic substrate such as Al2O3 (Alumina), AlN (Aluminum Nitride), HPS (ZrO2 doped) or silicon based Si3N4 (Silicon Nitride).
curamik provides two technologies to attach the substrate with the copper. DBC (direct bond copper) – a high temperature melting and diffusion process where the pure copper is bonded onto the ceramic and AMB (active metal brazing) – a high temperature process where the pure copper is brazed onto the ceramic substrate.The high heat conductivity of Al2O3 (24 W/mK), AlN (170 W/mK) and Si3N4 (90 W/mK) as well as the high heat capacity and thermal spreading of the thick copper cladding (127 – 800 μm) makes our substrates indispensable to power electronics. The mechanical stress on silicon chips mounted directly on the substrate (Chip on Board) is very low, since the coefficient of thermal expansion (CTE) of the ceramic substrate is better matched to the CTE of silicon compared to substrates using a metal or a plastic basis. Rogers produces high temperature/high voltage substrates in a master card format that measures 5“ x 7“ and 5.5“ x 7.5“. The individual parts can be left in the master card format to support more efficient assembly and mounting of components before being separated into individual pieces. We also offer single pieces for single piece assembly.
Advantages:
■ Great heat conductivity and temperature resistance for high performance and high temperature applications
■ High insulation voltage
■ High heat spreading
■ Adjusted coefficient of thermal expansion between chip and substrate
■ Efficient processing of master cards and single pieces

ROGERS

high temperature,high voltage substratessubstratesCERAMIC SUBSTRATESAl2O3 ceramic based substratesHPS substrates

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2021/05/16

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