HUAXUANYANG HXY FDS6912A Dual N-Channel Enhancement Mode MOSFET

PublishTime：2025-04-24

The FDS6912A is a dual N-Channel Enhancement Mode MOSFET utilizing advanced trench technology, offering excellent RDS(ON), low gate charge, and operation with gate voltages as low as 2.5V. It is suitable for battery protection and other switching applications. Key features include a VDS of 30V, an ID of 8.5A, and an RDS(ON) of less than 18mΩ at VGS=4.5V. The device is available in SOP-8 (SO-8) package.

Brand of Product：	HUA XUAN YANG ELECTRONIC
Part#：	FDS6912A More Part#
Product Category：	MOSFET More
Application：	[ Battery protection ][ switching applications ] More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：	SOP-8 (SO-8)
Language：	English Chinese Chinese and English Japanese
Date of Creation：
Version Number：
Data Encoding：
Data Size：	964 KB

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