FDS6912A Dual N-Channel Logic Level PowerTrench®️ MOSFET
●These N-Channel Logic Level MOSFETs are produced using ON Semiconductor’s advancedPowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
●These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
■Features
●6 A, 30 V. R-DS(ON) = 28 mΩ @ V-GS = 10 V, R-DS(ON) = 35 mΩ @ V-GS = 4.5 V
●Fast switching speed
●Low gate charge
●High performance trench technology for extremely low R-DS(ON)
●High power and current handling capability
Dual N-Channel Logic Level PowerTrench®️ MOSFET 、 N-Channel Logic Level MOSFETs |
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[ low voltage applications ][ battery powered applications ] |
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Datasheet |
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Please see the document for details |
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SO-8 |
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English Chinese Chinese and English Japanese |
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October-2017 |
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Rev. 4 |
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FDS6912A/D |
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244 KB |
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