FDS6912A Dual N-Channel Logic Level PowerTrench®️ MOSFET

2021-11-11
■General Description
●These N-Channel Logic Level MOSFETs are produced using ON Semiconductor’s advancedPowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
●These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
■Features
●6 A, 30 V. R-DS(ON) = 28 mΩ @ V-GS = 10 V, R-DS(ON) = 35 mΩ @ V-GS = 4.5 V
●Fast switching speed
●Low gate charge
●High performance trench technology for extremely low R-DS(ON)
●High power and current handling capability

ON Semiconductor

FDS6912A

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Part#

Dual N-Channel Logic Level PowerTrench®️ MOSFETN-Channel Logic Level MOSFETs

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low voltage applications ]battery powered applications ]

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Datasheet

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Please see the document for details

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SO-8

English Chinese Chinese and English Japanese

October-2017

Rev. 4

FDS6912A/D

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