FDS6912A MOSFET– Dual, N-Channel, Logic Level, POWERTRENCH®

2022-03-29
●30 V, 6 A, 28 mΩ
●General Description
■These N−Channel Logic Level MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance.
■These devices are well suited for low voltage and battery powered applications where low in−line power loss and fast switching are required.
●Features
■6.0 A, 30 V
▲R-DS(ON) = 28 mΩ @ V-GS = 10 V
▲R-DS(ON) = 35 mΩ @ V-GS = 4.5 V
■Fast Switching Speed
■Low Gate Charge
■High Performance Trench Technology for Extremely Low R-DS(ON)
■High Power and Current Handling Capability
■This Device is Pb−Free and Halogen Free

ON Semiconductor

FDS6912A

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Part#

Dual N-Channel MOSFETN−Channel Logic Level MOSFETs

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Datasheet

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Please see the document for details

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SOIC8

English Chinese Chinese and English Japanese

January, 2022

Rev. 5

FDS6912A/D

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