FDS6912A MOSFET– Dual, N-Channel, Logic Level, POWERTRENCH®
●General Description
■These N−Channel Logic Level MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance.
■These devices are well suited for low voltage and battery powered applications where low in−line power loss and fast switching are required.
●Features
■6.0 A, 30 V
▲R-DS(ON) = 28 mΩ @ V-GS = 10 V
▲R-DS(ON) = 35 mΩ @ V-GS = 4.5 V
■Fast Switching Speed
■Low Gate Charge
■High Performance Trench Technology for Extremely Low R-DS(ON)
■High Power and Current Handling Capability
■This Device is Pb−Free and Halogen Free
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Datasheet |
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Please see the document for details |
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SOIC8 |
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English Chinese Chinese and English Japanese |
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January, 2022 |
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Rev. 5 |
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FDS6912A/D |
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237 KB |
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