FDS6912A Dual N-Channel Logic Level PowerTrench® MOSFET
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
●Features:
■6 A, 30 V. R-DS(ON) = 28mΩ @ V-GS = 10V
R-DS(ON) = 35 mΩ @ V-GS = 4.5 V
■Fast switching speed
■Low gate charge
■High performance trench technology for extremely low R-DS(ON)
■High power and current handling capability
Datasheet |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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October-2017 |
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Rev.4 |
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FDS6912A/D |
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182 KB |
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