G120P06M P-Channel Enhancement Mode Power MOSFET

2024-07-04
●Description ■The G120P06M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. ●General Features ■VDS -60V ■ID (at VGS = -10V) -120A ■RDS(ON) (at VGS = -10V) < 8.5mΩ ■100% Avalanche Tested ■RoHS Compliant

GOFORD

G120P06M

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Part#

P-Channel Enhancement Mode Power MOSFET

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Power switch ]DC/DC converters ]

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Datasheet

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TO-263

English Chinese Chinese and English Japanese

2022/8/1

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