G120N04A Datasheet
■The G120N04A uses advanced trench technology and design to provide excellent R-DS(ON) with low gate charge. It can be used in a wide variety of applications.
●General Features
■V-DSS: 40V
■R-DS(ON) @4.5V(typ): 5.5mΩ
■R-DS(ON) @10V(typ): 3.2mΩ
■I-D: 120A
■High density cell design for ultra low Rdson
■Fully characterized avalanche voltage and current
■Good stability and uniformity with high E-AS
■Excellent package for good heat dissipation
■Special process technology for high ESD capability
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[ Loads witching ][ Hard switched ][ high frequency circuits ][ Uninterruptible power supply ] |
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Datasheet |
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Please see the document for details |
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TO-220 |
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English Chinese Chinese and English Japanese |
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2014/7/14 |
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2 MB |
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