G120N04 Datasheet
■The 120N04 uses advanced trench technology and design to provide excellent R-DS(ON) with low gate charge. It can be used in a wide variety of applications.
●General Features
■V-DSS: 40V
■R-DS(ON) @4.5V (typ): 5.6mΩ
■R-DS(ON) @10V (typ): 3.3mΩ
■I-D: 120A
■High density cell design for ultra low Rdson
■Fully characterized avalanche voltage and current
■Good stability and uniformity with high E-AS
■Excellent package for good heat dissipation
■Special process technology for high ESD capability
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[ Load switching ][ Hard switched ][ high frequency circuits ][ Uninterruptible power supply ] |
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Datasheet |
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Please see the document for details |
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TO-252;TO-251 |
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English Chinese Chinese and English Japanese |
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2015/11/1 |
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1.3 MB |
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