CHA8612-QDB 18W X-Band High Power Amplifier GaN Monolithic Microwave IC in SMD leadless package
●Description
■The CHA8612-QDB is a two stage High Power Amplifier operating between 7.9 and 11GHz and providing typically 18W of saturated output power and 40% of Power Added Efficiency. It is designed for a wide range of applications, from military to commercial radar and communication systems.
■The circuit is manufactured with a GaN HEMT process, 0.25μm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
●Main Features
■Broadband performances: 7.9-11GHz
■High output power: 18W
■High PAE: 40%
■Linear Gain: 26dB
■DC bias: Vd=30Volt @ Idq=680mA
■MSL 3
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CHA8612-QDB 、 CHA8612-QDB/XY 、 CHA8612-QDB/20 、 CHA8612-QDB/21 |
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X-Band High Power Amplifier 、 two stage High Power Amplifier 、 GaN Monolithic Microwave IC |
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[ military ][ commercial radar ][ communication systems ] |
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Datasheet |
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Please see the document for details |
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QFN;SMD |
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English Chinese Chinese and English Japanese |
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12 Feb 24 |
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DSCHA8612-QDB4043 |
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1.9 MB |
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