CHA8612-QDB 18W X-Band High Power Amplifier:GaN Monolithic Microwave IC in SMD leadless package
●The CHA8612-QDB is a two stage High Power Amplifier operating between 7.9 and 11GHz and providing typically 18W of saturated output power and 40% of Power Added Efficiency.
●It is designed for a wide range of applications, from military to commercial radar and communication systems.
●The circuit is manufactured with a GaN HEMT process, 0.25μm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
■Main Features:
●Broadband performances: 7.9-11GHz
●High output power: 18W
●High PAE: 40%
●Linear Gain: 26dB
●DC bias: Vd=30Volt @ Idq=680mA
●MSL 3
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CHA8612-QDB 、 CHA8612-QDB/XY 、 CHA8612-QDB/20 、 CHA8612-QDB/21 |
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18W X-Band High Power Amplifier 、 GaN Monolithic Microwave IC 、 two stage High Power Amplifier |
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[ military ][ commercial radar ][ communication systems ] |
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Datasheet |
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Please see the document for details |
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SMD;QFN |
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English Chinese Chinese and English Japanese |
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20 Apr 23 |
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DSCHA8612-QDB3110 |
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2.8 MB |
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