SILICON CARBIDE (SIC) SUBSTRATES

2024-01-12
The unique electronic and thermal properties of silicon carbide (SiC) make it ideally suited for advanced high power and high frequency semiconductor devices that operate well beyond the capabilities of either silicon or gallium arsenide devices. The key advantages of SiC-based technology include reduced switching losses, higher power density, better heat dissipation and increased bandwidth capability. At the system level, this results in highly compact solutions with vastly improved energy efficiency at reduced cost.

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SILICON CARBIDE SUBSTRATESSIC SUBSTRATES

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advanced high power semiconductor devices ]advanced high frequency semiconductor devices ]Switching power supplies ]Inverters ]green energy generation ]solar energy generation ]windmill energy generation ]Industrial motor drives ]HEV vehicles ]EV vehicles ]Smart grid power switching ]Wireless communication 5G base stations ]Radar Applications ]Thermal Management ]

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2023/8/25

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