SILICON CARBIDE (SIC) SUBSTRATES

PublishTime：2024-01-12

The unique electronic and thermal properties of silicon carbide (SiC) make it ideally suited for advanced high power and high frequency semiconductor devices that operate well beyond the capabilities of either silicon or gallium arsenide devices. The key advantages of SiC-based technology include reduced switching losses, higher power density, better heat dissipation and increased bandwidth capability. At the system level, this results in highly compact solutions with vastly improved energy efficiency at reduced cost.

Brand of Product：	COHERENT
Part#：	N-type More Part#
Product Category：	SILICON CARBIDE SUBSTRATES 、 SIC SUBSTRATES More
Application：	[ advanced high power semiconductor devices ][ advanced high frequency semiconductor devices ][ Switching power supplies ][ Inverters ][ green energy generation ][ solar energy generation ][ windmill energy generation ][ Industrial motor drives ][ HEV vehicles ][ EV vehicles ][ Smart grid power switching ][ Wireless communication 5G base stations ][ Radar Applications ][ Thermal Management ] More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：
Language：	English Chinese Chinese and English Japanese
Date of Creation：	2023/8/25
Version Number：
Data Encoding：
Data Size：	143 KB

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