SL05N06A N-Channel Enhancement Mode Field Effect Transistor
■VDS 60V
■ID 5.0A
■RDS(ON)( at VGS=10V) <100 mohm
■RDS(ON)( at VGS=4.5V) <120 mohm
●General Description
■Trench Power MV MOSFET technology
■Excellent package for heat dissipation
■High density cell design for low RDS(ON)
Datasheet |
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Please see the document for details |
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SOT-223 |
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English Chinese Chinese and English Japanese |
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2022/1/11 |
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1 MB |
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