BSS123 N-Channel Enhancement Mode MOSFET
■The BSS123 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications.
●General Features
■VDS = 100V,ID = 0.17A
■RDS(ON) < 6 Ω @ VGS= 10V
|
[ Battery ][ Load switch ][ Uninterruptible power supply ][ PWM applications ] |
|
|
Datasheet |
|
|
|
|
Please see the document for details |
|
|
|
|
|
|
|
|
SOT-23 |
|
|
English Chinese Chinese and English Japanese |
|
|
2022/11/15 |
|
|
|
|
|
|
|
|
2 MB |
- +1 Like
- Add to Favorites
Recommend
- Hua Xuan Yang Electronics: Domestic Power Device Solutions for PC Power Supplies
- HUA XUAN YANG ELECTRONIC Provides A Power Device Solution Tailored for In Car Wireless Mobile Phone Chargers
- Application of MOSFET in Outdoor Power Supply
- Hua Xuanyang MOSFET Series Suitable for Brushless Motor Commutator, Having Low On-resistance, High Switching Speed, High Temperature Stability
- HXY MOSFET Provides A Power Device Solution for LED Backlit LCD TVs
- Huaxuan Yang Electronics: UPS Uninterruptible Power Supply Power Device Solution
- Why Is It Important to Prioritize Electromagnetic Compatibility (EMC) in Circuit Design?
- Application of HXY MOSFET in Micro Photovoltaic Inverters
All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.
Integrated Circuits
Discrete Components
Connectors & Structural Components
Assembly UnitModules & Accessories
Power Supplies & Power Modules
Electronic Materials
Instrumentation & Test Kit
Electrical Tools & Materials
Mechatronics
Processing & Customization
