BSS123LT1G N-Channel Enhancement Mode MOSFET
■The BSS123LT1G uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications.
●General Features
■VDS = 100V,ID = 0.17A
■RDS(ON) < 6 Ω @ VGS= 10V
■ESD Rating: 1500V HBM
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Datasheet |
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Please see the document for details |
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SOT-23 |
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English Chinese Chinese and English Japanese |
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2023/7/27 |
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849 KB |
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