BSS123
●Description
■These N-Channel enhancement mode field effect transistors uses advanced trench technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as
▲Small Servo Motor Control
▲Power MOSFET Gate Drivers
▲Switching Applications
●FEATURES
■Low Gate Threshold Voltage
■Low Input Capacitance
■Fast Switching Speed
■Low Input/Output Leakage
■High Drain-Source Voltage Rating
■RoHS compliant package
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N-Channel ENHANCEMENT MODE MOSFET 、 N-Channel enhancement mode field effect transistors |
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[ Small Servo Motor Control ][ Power MOSFET Gate Drivers ][ Switching Applications ] |
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Datasheet |
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Please see the document for details |
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SOT-23 |
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English Chinese Chinese and English Japanese |
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2019/04/09 |
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Rev. A |
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563 KB |
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