HUAXUANYANG HXY BSS123NH6327XTSA1 N-Channel Enhancement Mode MOSFET

2025-03-19
The BSS123NH6327XTSA1 is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology to offer excellent RDS(ON). It is designed for use as a load switch or in PWM applications. The device features a VDS of 100V, ID of 0.17A, and RDS(ON) less than 6 Ω at VGS=10V. It also has an ESD Rating of 1500V HBM. The BSS123NH6327XTSA1 is suitable for battery protection, load switch, and uninterruptible power supply applications.

HUA XUAN YANG ELECTRONIC

BSS123NH6327XTSA1

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N-Channel Enhancement Mode MOSFET

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Battery protection ]Load switch ]Uninterruptible power supply ]

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Please see the document for details

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SOT-23 (TO-236-3)

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