Development Board EPC9150 Quick Start Guide: EPC2034C 200 V High Current Pulsed Laser Diode Driver
●The EPC9150 demonstration board is primarily intended to drive laser diodes with high current pulses with total pulse widths of < 3 ns possible (half amplitude full width). The board is shipped with a EPC2034C enhancement mode (eGaN®) field effect transistor (FET). The EPC2034C is a 200 V FET capable of current pulses up to 214 A. The EPC9150 ships with the EPC9989 interposer board. The EPC9989 has a collection of break-away 5 mm square interposer PCBs with footprints for different lasers and a collection of other footprints. The use of the interposers allows many different lasers or other loads to be mounted while still being able to use the EPC9150. The boards do not include a laser diode or load, which must be supplied by the user.
●The power stage of the EPC9150 comprises a ground-referenced eGaN FET driven by a Texas Instruments LMG1020 gate driver. The printed circuit board is designed to minimize the power loop inductance while maintaining mounting flexibility for the laser diode or other load. It includes multiple on-board passive probes for voltages and discharge capacitor current, and is equipped with high bandwidth SMA connectors for input and sensing. In addition, the board includes a narrow pulse generator capable of sub-nanosecond precision, or the user can simply send the input to the gate drive directly. As shipped, the board is designed to operate from 3.3 V logic, but is equipped with both a logic level translator and a differential receiver to accommodate different use cases. Finally, the board can also be used for other applications requiring a ground-referenced eGaN FET, e.g. Class E amplifiers or similar. A complete block diagram of the circuit is given in Figure 1, and a detailed schematic in Figures 7, 8, and 9.
|
Development Board 、 High Current Pulsed Laser Diode Driver 、 demonstration board 、 FET 、 enhancement mode field effect transistor 、 eGaN® FET 、 enhancement mode FET 、 ground-referenced eGaN FET 、 eGaN FET |
|
|
|
|
|
User's Guide |
|
|
|
|
Please see the document for details |
|
|
|
|
|
|
|
|
SMD |
|
|
English Chinese Chinese and English Japanese |
|
|
2023/5/2 |
|
|
Revision 2.0 |
|
|
|
|
|
960 KB |
- +1 Like
- Add to Favorites
Recommend
- EPC Introduces EPC9157 48V to 12V Demo Board Featuring EPC eGaN FETs and New Renesas DC-DC Controller
- EPC‘s New EPC9165 Bidirectional Converter that Delivers 2kW with 96.8% Peak Efficiency
- Design High-Performance Class-D Audio Amplifiers with EPC’s New Reference Design EPC9192 and eGaN FETs
- Sharge Selects GaN FETs EPC2218 from EPC for High-power USB PD Charger Retro 67 to Achieve the Most Efficient Power Conversion
- EPC Announces EPC9193 eGaN® FET Based 3-Phase BLDC Motor Drive Inverter for Low-Cost E-Bikes, Drones and Robotics
- EPC Launches a 3-phase BLDC Motor Drive Inverter EPC9173 with Embedded Gate Driver Function and a Floating Power GaN FET with 3.3mΩ RDS(on)
- Sekorm Became an Authorized Distributor of EPC(Efficient Power Conversion), Which Brings GaN FET Products
- Lidar Demonstration Board Drives Lasers with Currents up to 220A with Under 3-ns Pulses Using eGaN FETs
All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.
Integrated Circuits
Discrete Components
Connectors & Structural Components
Assembly UnitModules & Accessories
Power Supplies & Power Modules
Electronic Materials
Instrumentation & Test Kit
Electrical Tools & Materials
Mechatronics
Processing & Customization
