V40DL45BP Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.26 V at IF = 5 A
●FEATURES
■ Trench MOS Schottky technology
■ Very low profile - typical height of 1.7 mm
■ Ideal for automated placement
■ Low forward voltage drop, low power losses
■ High efficiency operation
■ Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
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V40DL45BP 、 TMBS ® 、 eSMP® 、 V40DL45BP-M3/I |
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[ solar cell junction box ][ DC forward current without reverse bias ] |
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Datasheet |
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Please see the document for details |
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SMPD |
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English Chinese Chinese and English Japanese |
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18-Mar-14 |
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Revision: 18-Mar-14 |
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87789 |
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178 KB |
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