HM2301KR P-Channel Enhancement Mode Power MOSFET
■The HM2301KR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
●GENERAL FEATURES
■VDS = -20V, ID = -3A
▲RDS(ON) < 140mΩ @ VGS=-2.5V
▲RDS(ON) < 110mΩ @ VGS=-4.5V
■High Power and current handing capability
■Lead free product is acquired
■Surface Mount Package
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[ Load switch ][ Power management ] |
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Datasheet |
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Please see the document for details |
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SOT-323 |
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English Chinese Chinese and English Japanese |
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2022/11/6 |
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v1.1 |
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837 KB |
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