VSD003N04MS-G 40V/58A N-Channel Advanced Power MOSFET
■Enhancement mode
■Low RDS(on) to minimize conduction losses
■VitoMOS® II Technology
■100% Avalanche Tested, 100% Rg Tested
■Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching losses
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Datasheet |
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Please see the document for details |
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TO-252 |
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English Chinese Chinese and English Japanese |
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FEB, 2023 |
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Rev A |
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1.1 MB |
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